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Using the Catalog Specifications to Determine MMIC Reliability

Using the Catalog Specifications to Determine MMIC Reliability

Specification pages for MMIC (microwave monolithic integrated circuit) amplifiers in the Mini-Circuits catalog contain graphs of typical MTTF (mean time to failure) as a function of junction temperature. To use one of these graphs it is necessary to know the junction temperature of the particular device. This article provides guidance for determining the junction temperature.
GVA-83+: LTE Performance vs Output Power

GVA-83+: LTE Performance vs Output Power

Mini-Circuits GVA-83+ high dynamic range MMIC amplifier is designed specifically for applications which require high linear performance, particularly wideband, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM.
Understanding Noise Parameter Measurements

Understanding Noise Parameter Measurements

This article reviews noise theory & measurements and S-parameter measurements used to characterize transistors and amplifiers at Modelithics, Inc.
UMTS (WCDMA) Performance vs. Output Power (TAMP-242GLN+)

UMTS (WCDMA) Performance vs. Output Power (TAMP-242GLN+)

Mini-Circuits TAMP-242GLN+ ultra-low noise drop-in amplifier module is an ideal low noise amplifier for use in UMTS (WCDMA) base station or tower mounted low noise applications. The TAMP-242GLN+ provides an optimized combination of critical performance: low noise/high dynamic range/input & output match/unconditional stability.
Transient Protection of Darlington Gain Block Amplifiers

Transient Protection of Darlington Gain Block Amplifiers

Monolithic wideband amplifiers are widely used in the RF and microwave systems. Many of these amplifiers use Darlington configuration. Mini-Circuits monolithic amplifiers with model prefix MAR and ERA, for example, use this configuration.
Power Supply Transient Protection for MNA and VNA Amplifiers

Power Supply Transient Protection for MNA and VNA Amplifiers

Shorting of the DC voltage terminal of a MMIC amplifier to ground while DC power is connected can cause permanent damage to the amplifier. This can occur, for example, in a test setup where the amplifier is in a fixture with clip leads for the DC connections; the clips are accidentally moved and they momentarily short the DC and ground terminals together.
Biasing of Constant Current MMIC Amplifiers (e.g. ERA Series)

Biasing of Constant Current MMIC Amplifiers (e.g. ERA Series)

The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which the biasing considerations in this article apply: ERA, Gali, LEE, MAR, MAV, RAM, and VAM.
HXG-242+: LTE Performance vs Output Power

HXG-242+: LTE Performance vs Output Power

The HXG-242+ is a high dynamic range MSiP (Mini-Circuits system in package) amplifier designed over a focused frequency range specifically for applications which require high linear performance, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM.