HXG-122+: LTE Performance vs. Output Power

Apr 12, 2015 | Amplifiers, Engineering Resources

LTE Base Station MMIC Amplifier

The HXG-122+ is a high dynamic range MSiP (Mini-Circuits system in package) amplifier designed over a focused frequency range specifically for applications which require high linear performance, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM.

The HXG-122+ provides typically +47 dBm OIP3 at 700 MHz which translates to high linear performance in multi-carrier and complex signal environments such as LTE supporting ACLR_1 measurements of better than – 60 dBc at +11 dBm output.

The HXG-122+ is characterized using a high peak-toaverage ratio OFDM signal used for next generation LTE within the 700 MHz downlink band.

Figure 1: HXG-122+ test board.

DUT Configuration:
Device:HXG-122+ test board.
Supply Voltage:5V, 150 mA.
Temperature: 25℃.
Note:All data is referenced to the test board connectors.

Test Signal: LTE FDD downlink (2009-3), full filled 64 QAM, 10 MHz (50 RB) Fc = 700 MHz.

Measurement Setup

Summary Data

Table 1: Data of ACLR and EVM vs. output power.
Figure 2: ACLR plot at output power of +14.95 dBm.
Figure 3: EVM plot at output power of +14.95 dBm.

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