PMA2-162LN+: LTE Performance vs. Output Power

Apr 9, 2015 | Amplifiers, Engineering Resources

LTE Base Station MMIC Amplifier

Mini-Circuits PMA2-162LN+ high dynamic range and super low noise MMIC amplifier is designed specifically for applications which require low noise and high linear performance, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM.

The E-PHEMT based PMA2-162LN+ provides typically +29 dBm OIP3 which translates to high linear performance in multi-carrier and complex signal environments such as LTE supporting ACLR_1 measurements of better than -60 dBc at +0 dBm output.

The PMA2-162LN+ is characterized using a high peakto-average ratio OFDM signal used for next generation LTE within the 700 MHz downlink band.

Figure 1: PMA2-162LN+ test board.

DUT Configuration:
Device: PMA2-162LN+ test board, R1=267Ω.
Supply voltage: 4V, 54 mA.
Temperature: 25°C.
Note: All data is referenced to the PCB connectors.

Test Signal:
LTE FDD downlink (2009-3).
Full filled 64 QAM, 10 MHz (50 RB).
Fc = 700 MHz.

Measurement Setup

Summary Data

Table 1: Data of ACLR and EVM vs. output power.
Figure 2: ACLR plot at output power of +10.07 dBm.
Figure 3: EVM plot at output power of +10.07 dBm.

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