YSF-322+: LTE Performance vs. Output Power

Sep 28, 2015 | Amplifiers, Engineering Resources

LTE Base Station MSiP Amplifier

Mini-Circuits YSF-322+ high dynamic range MSiP amplifier is designed specifically for applications which require high linear performance, advanced digital communications systems such as LTE which require excellent ACLR suppression and low EVM.

The YSF-322+ provides typically +35 dBm OIP3 which translates to high linear performance in multi-carrier and complex signal environments such as LTE supporting ACLR_1 measurements of better than -60 dBc at +4 dBm output.

The YSF-322+ is characterized using a high peak-toaverage ratio OFDM signal used for next generation LTE within the 1900MHz downlink band.

Figure 1: YSF-322+ test board.

DUT Configuration:
Device: YSF-322+ test board.
Supply Voltage: 5V, 123 mA.
Temperature: 25°C.
Note: All data is referenced to the PCB connectors.

Test Signal:
LTE FDD downlink (2009-3).
Full filled 64 QAM, 10MHz (50 RB).
Fc = 700 MHz.

Measurement Setup

Summary Data

Table 1: Data of ACLR and EVM vs. output power.
Figure 2: ACLR Plot at output power of +11.45 dBm.
Figure 3: EVM plot at output power of +11.45 dBm.

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